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| SB20100LCT DUAL LOW VF SCHOTTKY RECTIFIER VOLTAGE FEATURES * Low forward voltage drop, low power losses * High efficiency operation * In compliance with EU RoHS 2002/95/EC directives 100 Volts CURRENT 20 Amperes MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 .058(1.47) Weight: 0.0655 ounces, 1.859 grams. .042(1.07) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.3) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Typical thermal resistance Operating junction Storage temperature range per device per diode per diode SYMBOL VRRM I F(AV) I FSM RJC TJ TSTG VALUE 100 20 10 200 2.5 -55 to + 150 -55 to + 150 o UNIT V A A C/W o C C o ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Breakdown voltage per diode SYMBOL VBR TEST CONDITIONS I R=1.0mA I F=5A I F=10A I F=5A I F=10A VR=70V Reverse current per diode (2) IR VR=100V TJ=25oC TJ=125oC TJ=25oC TJ=125oC MIN. 103 TYP. 120 0.55 0.52 0.62 12 MAX. 0.60 0.75 0.7 40 500 35 UNIT V V V A A mA Instantaneous forward voltage per diode (1) VF Note.1 Pulse test : 380s pulse width, 1% duty cycle 2. Pulse test : Pulse width < 2.5ms PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE June.9.2010-REV.01 PAGE . 1 SB20100LCT IR, Leakage Current (mA) 100 100 10 1 0.1 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 20 40 60 80 100 IF, Forward Current (A) TJ = 125C 10 TJ = 150C TJ=125C 1 TJ = 25C TJ = 25C Per Diode TJ = 75C 0.1 Per Diode VF, Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.1 Typical Forward Characteristics 12 10000 Fig.2 Typical Reverse Characteristics IF, Forward Current (A) 10 8 6 4 2 CJ, Junction Capacitance (pF) 1000 100 Per Diode 0 0 25 50 75 100 125 150 Per Diode 10 0.1 1 10 100 TC, Case Temperature (C) VR, Reverse Bias Voltage (V) Fig.3 Forward Current Derating Curve Fig.4 Typical Junction Capacitance June.9.2010-REV.01 PAGE . 2 |
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